Ultra-Wide Bandgap Semiconductors (UWBG)
Abstract
The Ultra-Wide Bandgap Semiconductors (UWBG) program will seek to develop an entirely new class of semiconductor materials that will offer performance breakthroughs for a range of applications when compared to existing compound semiconductors. Electrical bandgap determines a material breakdown voltage, intrinsic charge carrier density, and color (wavelength) of light emission, and also impacts the maximum output power and operating frequency of a transistor made from the material. Consequently, wide bandgaps have considerable interest for the DoD due to the high operating temperatures, currents, voltages, and frequencies often required by emerging high power, agile Radio Frequency (RF) sources for radar, communications, directed energy, and electronic warfare. This program will overcome the fundamental materials and device challenges that currently prevent implementation of UWBG materials into power, RF, and optoelectronic devices and systems. These challenges include reliably manufacturing low-defect substrates, heteroepitaxial material growth, and high concentration p-type and n-type doping.
Document Details
- Document Type
- Accomplishment
- Publication Date
- Oct 01, 2023
- Source ID
- 01e1e51df7196e335ac19806f501a57c