Dynamic Range-enhanced Electronics and Materials (DREaM)
Abstract
The Dynamic Range-enhanced Electronics and Materials (DREaM) program aims to develop intrinsically linear (ideal) radio frequency (RF) transistors with improved power efficiency and extremely high dynamic range. Linearity, power efficiency, and dynamic range are fundamental characteristics that allow RF systems to reliably transmit clear signals. Improving these characteristics is essential to operating in a crowded RF environment and to enabling next-generation communication, sensing, and electronic warfare systems. Traditional RF transistor designs typically require a trade-off between linearity and broadcast power, and poor linearity results in undesired interference. DREAM will overcome this tradeoff by employing new transistor materials, architectures, and designs. The resulting DREAM-enabled technologies will allow future RF electronics to increase their operating range without polluting the already-congested RF spectrum and while consuming less system power.
Document Details
- Document Type
- Accomplishment
- Publication Date
- Oct 01, 2019
- Source ID
- 02505b3145d2ac7818c7648f4a1db936
Related Documents
- Root: ELECTRONICS TECHNOLOGY