Fast and Big Mixed-Signal Designs (FAB)
Abstract
Developing capabilities to intermix and tightly integrate silicon processes which are currently supported at different scaling nodes and by different vendors is critical to increasing the capabilities of high-performance military microelectronics. Specifically, silicon-germanium (SiGe) processes allow complementary metal-oxide semiconductor (CMOS) logic to be integrated with RF heterojunction bipolar transistors (HBTs), which enables mixed-signal circuits having RF analog capabilities tightly coupled to digital processing. The Fast and Big Mixed-Signal Designs (FAB) program proposes to engage with a semiconductor fabrication partner to develop a SiGe fabrication process integrating 14nm CMOS. The SiGe technology will enable the development of faster, more precise RF and signal acquisition components, while the 14nm CMOS process will enable low-power digital circuitry that can provide the large throughput required for data from the analog components. The ability to mix massive digital computation at lower power with the fast sampling enabled by Silicone Germanium (SiGe) HBTs gives a powerful platform for future generations of Electronic Warfare (EW) systems. This program will seek to overcome the tradeoffs in providing the highest performance analog performance versus the densest and lowest power digital processes. Success will enable higher performance, lower cost, and more rapid insertion of advanced process technology into military electronics.
Document Details
- Document Type
- Accomplishment
- Publication Date
- Oct 01, 2015
- Source ID
- 06c33fcfcb56f8219bb9f55306738de3
Related Documents
- Root: ELECTRONICS TECHNOLOGY