Diverse & Accessible Heterogeneous Integration (DAHI)
Abstract
Prior DARPA efforts have demonstrated the ability to monolithically integrate inherently different semiconductor types to achieve near-ideal "mix-and-match" capability for DoD circuit designers. Specifically, the Compound Semiconductor Materials On Silicon (COSMOS) program, in which transistors of Indium Phosphide (InP) can be freely mixed with silicon complementary metal-oxide semiconductor (CMOS) circuits to obtain the benefits of both technologies (very high speed and very high circuit complexity/density, respectively). The Diverse & Accessible Heterogeneous Integration (DAHI) effort will take this capability to the next level, ultimately offering the seamless co-integration of a variety of semiconductor devices (e.g., GaN, InP, GaAs, ABCS), microelectromechanical (MEMS) sensors and actuators, photonic devices (e.g., lasers, photo-detectors) and thermal management structures. This capability will revolutionize our ability to build true "systems on a chip" (SoCs) and allow dramatic size, weight and volume reductions for a wide array of system applications. The Basic Research part of this program will focus on the development of new hetero-integration processes and capabilities that, if successful, will ultimately be demonstrated in application-specific circuits and transferred into the manufacturing flow. Applied research efforts are funded in PE 0602716E, Project ELT-01.
Document Details
- Document Type
- Accomplishment
- Publication Date
- Oct 01, 2013
- Source ID
- 0722931f91894d8cf021c5bcc2ae1c32