High‐Temperature Hybridized Copper–Boron Nitride Materials from Additive Manufacturing

Abstract

Copper plays an important role in electronics, while the demands for extreme environment technology desire copper to be capable of use at high temperatures. However, copper suffers greatly from oxidation in the environment, posing a great challenge toward the reliability of electronics in extreme environments. Herein, high‐temperature (1000 °C)‐capable copper–boron nitride hybridized conductor materials from additive manufacturing of copper nanoplates along with a borane–ammonia complex precursor are reported. Such hybridized conductor materials show high electric conductivities of 4.8 MS m−1 and current‐carrying capacity of 4.5 × 107 A m−2. In addition, the capillary action of liquid silver is demonstrated, and alumina packaging strategies passivate hybridized copper–boron nitride for the enhanced cyclability at high temperatures.

Document Details

Document Type
Pub Defense Publication
Publication Date
Oct 06, 2022
Source ID
10.1002/adem.202201056

Entities

People

  • Aaron Sheng
  • Cheng-gang Zhuang
  • Jian Yu
  • Saurabh Khuje
  • Shenqiang Ren

Organizations

  • Air Force Research Laboratory
  • United States Army Research Laboratory
  • University at Buffalo

Tags

Readers

  • Nanoscale Plasmonic Nanotechnology
  • Systems Analysis and Design
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene