High‐Performance Flexible Multilayer MoS2 Transistors on Solution‐Based Polyimide Substrates
Abstract
Transition metal dichalcogenides (TMDs) layers of molecular thickness, in particular molybdenum disulfide (MoS2), become increasingly important as active elements for mechanically flexible/stretchable electronics owing to their relatively high carrier mobility, wide bandgap, and mechanical flexibility. Although the superior electronic properties of TMD transistors are usually integrated into rigid silicon wafers or glass substrates, the achievement of similar device performance on flexible substrates remains quite a challenge. The present work successfully addresses this challenge by a novel process architecture consisting of a solution‐based polyimide (PI) flexible substrate in which laser‐welded silver nanowires are embedded, a hybrid organic/inorganic gate insulator, and multilayers of MoS2. Transistors fabricated according to this process scheme have decent properties: a field‐effect‐mobility as high as 141 cm2 V−1 s−1 and an Ion/Ioff ratio as high as 5 × 105. Furthermore, no apparent degradation in the device properties is observed under systematic cyclic bending tests with bending radii of 10 and 5 mm. Overall electrical and mechanical results provide potentially important applications in the fabrication of versatile areas of flexible integrated circuitry.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Feb 09, 2016
- Source ID
- 10.1002/adfm.201505019
Entities
People
- Costas P Grigoropoulos
- Hyuk‐jun Kwon
- Jozeph Park
- Junyeob Yeo
- Ki‐uk Kyung
- Minjeong Kim
- Sungryul Yun
- Sunkook Kim
- Suntak Park
- Won Geun Song
- Young Ki Hong
Organizations
- Air Force Office of Scientific Research
- Kyung Hee University