Concurrent Synthesis of High‐Performance Monolayer Transition Metal Disulfides
Abstract
To date, the chemical vapor deposition (CVD) approach has been widely used for the growth of transition metal dichalcogenides (TMDs). However, the reported CVD methods to synthesize TMDs cannot be used to grow more than one type of TMDs. This work reports a promising CVD technique to concurrently synthesize multiple monolayer transition metal disulfides once. The optoelectrical characterization and high‐resolution transmission electron microscopy show the high quality of monolayer crystals, and, more importantly, there is no mixing between different precursors during the growth process, which has been investigated by considering the gas flow dynamics and concentration distribution of precursors in our setup. This strategy indicates the promising future for the batch production of 2D materials and the concurrent synthesis techniques in standard state‐of‐the‐art complementary metal‐oxide‐semiconductor (CMOS) fabrication technology.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Mar 09, 2017
- Source ID
- 10.1002/adfm.201605896
Entities
People
- Hui Ying Yang
- Jing Kong
- Lay Kee Ang
- Linfeng Sun
- Matthew F. Chisholm
- Shize Yang
- Shi‐Jun Liang
- Wei Sun Leong
- Yongjian Tang
- Yunwei Mao
Organizations
- Air Force Office of Scientific Research
- Hong Kong University of Science and Technology
- Massachusetts Institute of Technology
- National Research Foundation
- Oak Ridge National Laboratory