The Contributions of Polar Nanoregions to the Dielectric and Piezoelectric Responses in Domain‐Engineered Relaxor‐PbTiO3 Crystals

Abstract

The existence of polar nanoregions is the most important characteristic of relaxor‐based ferroelectric materials. Recently, the contributions of polar nanoregions to the shear piezoelectric property of relaxor‐PbTiO3 (PT) crystals are confirmed in a single domain state, accounting for 50%–80% of room temperature values. For electromechanical applications, however, the outstanding longitudinal piezoelectricity in domain‐engineered relaxor‐PT crystals is of the most significance. In this paper, the contributions of polar nanoregions to the longitudinal properties in [001]‐poled Pb(Mg1/3Nb2/3)O3‐0.30PbTiO3 and [110]‐poled Pb(Zn1/3Nb2/3)O3‐0.15PbTiO3 (PZN‐0.15PT) domain‐engineered crystals are studied. Taking the [110]‐poled tetragonal PZN‐0.15PT crystal as an example, phase‐field simulations of the domain structures and the longitudinal dielectric/piezoelectric responses are performed. According to the experimental results and phase‐field simulations, the contributions of polar nanoregions (PNRs) to the longitudinal properties of relaxor‐PT crystals are successfully explained on the mesoscale, where the PNRs behave as “seeds” to facilitate macroscopic polarization rotation and enhance electric‐field‐induced strain. The results reveal the importance of local structures to the macroscopic properties, where a modest structural variation on the nanoscale greatly impacts the macroscopic properties.

Document Details

Document Type
Pub Defense Publication
Publication Date
Mar 21, 2017
Source ID
10.1002/adfm.201700310

Entities

People

  • Fei Li
  • Long‐qing Chen
  • Shujun Zhang
  • Zhuo Xu

Organizations

  • National Natural Science Foundation of China
  • Natural Science Foundation of Shaanxi Province
  • Office of Naval Research
  • Office of Naval Research Global
  • Pennsylvania State University
  • University of Wollongong

Tags

Readers

  • Computational Modeling and Simulation
  • Materials Science and Engineering.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene