Threshold Switching of Ag or Cu in Dielectrics: Materials, Mechanism, and Applications
Abstract
Threshold switches with Ag or Cu active metal species are volatile memristors (also termed diffusive memristors) featuring spontaneous rupture of conduction channels. The temporal dynamics of the conductance evolution is closely related to the electrochemical and diffusive dynamics of the active metals which could be modulated by electric field strength, biasing duration, temperature, and so on. Microscopic pictures by electron microscopy and quantitative thermodynamics modeling are examined to give insights into the underlying physics of the switching. Depending on the time scale of the relaxation process, such devices find a variety of novel applications in electronics, ranging from selector devices for memories to synaptic devices for neuromorphic computing.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Dec 18, 2017
- Source ID
- 10.1002/adfm.201704862
Entities
People
- Can Li
- Hao Jiang
- Huaqiang Wu
- Jianhua Joshua Yang
- Mingyi Rao
- Peng Lin
- Qiangfei Xia
- Rivu Midya
- Saumil Joshi
- Shiva Asapu
- Wenhao Song
- Ye Zhuo
- Zhongrui Wang
Organizations
- Air Force Office of Scientific Research
- Air Force Research Laboratory
- National Natural Science Foundation of China
- National Science Foundation
- Shanghai Municipal Science and Technology Commission
- Tsinghua University
- University of Massachusetts