Oxygen Stoichiometry Effect on Polar Properties of LaAlO3/SrTiO3
Abstract
Discovery of a ferroelectric‐like behavior of the LaAlO3/SrTiO3 (LAO/STO) interfaces provides an attractive platform for the development of nanoelectronic devices with functionality that can be tuned by electrical or mechanical means. However, further progress in this direction critically depends on deeper understanding of the physicochemical mechanism of this phenomenon. In this report, this problem by testing the electronic properties of the LAO/STO heterostructures with oxygen stoichiometry used as a variable is addressed. Local probe measurements in conjunction with interface electrical characterization allow to establish the field‐driven reversible migration of oxygen vacancies as the origin of the ferroelectric‐like behavior in LAO/STO. In addition, it is shown that oxygen deficiency gives rise to the formation of micrometer‐long atomically sharp boundaries with robust piezoelectricity stemming from a significant strain gradient across the boundary region. These boundaries are not ferroelectric but they can modulate the local electronic characteristics at the interface. The obtained results open a possibility to design and engineer electromechanical functionality in a wide variety of nominally nonpolar and non‐piezoelectric complex oxide heterostructures and thin films.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Apr 23, 2018
- Source ID
- 10.1002/adfm.201707159
Entities
People
- Alexei Gruverman
- Ariando
- Changjian Li
- Chang‐beom Eom
- Hyungwoo Lee
- Jan Seidel
- Jungwoo Lee
- Mengsha Li
- Pankaj Sharma
- Songbai Hu
- Stephen J. Pennycook
- Zhen Huang
Organizations
- Air Force Office of Scientific Research
- Australian Research Council
- National Science Foundation
- University of Nebraska–Lincoln
- University of New South Wales
- University of Wisconsin–Madison