Photoelectric Synaptic Plasticity Realized by 2D Perovskite
Abstract
Recently, several light‐stimulated artificial synaptic devices have been proposed to mimic photonic synaptic plasticity for neuromorphic computing. Here, the photoelectric synaptic plasticity based on 2D lead‐free perovskite ((PEA)2SnI4) is demonstrated. The devices show a photocurrent activation in response to a light stimulus in a neuron‐like way and exhibit several essential synaptic functions such as short‐term plasticity (STP) and long‐term plasticity (LTP) as well as their transmission based on spike frequency control. The strength of synaptic connectivity can be effectively modulated by the duration, irradiance, and wavelength of light spikes. The ternary structure of (PEA)2SnI4 causes it to possess varied photoelectric properties by composition control, which enhances the complexity and freedoms required by neuromorphic computing. The physical mechanisms of the memory effect are attributed to two distinct lifetimes of photogenerated carrier trapping/detrapping processes modulated by controlling the proportion of Sn vacancies. This work demonstrates the great potential of (PEA)2SnI4 as a platform to develop future multifunctional artificial neuromorphic systems.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- May 08, 2019
- Source ID
- 10.1002/adfm.201902538
Entities
People
- Dan Xie
- Liming Ding
- Liu Qian
- Mengxing Sun
- Tianling Ren
- Tomás Palacios
- Weiwei Li
- Yilin Sun
- Yuxuan Lin
Organizations
- Army Research Office
- Institute of Microelectronics
- Massachusetts Institute of Technology
- Ministry of Science and Technology of the People's Republic of China
- National Natural Science Foundation of China
- National Science Foundation