Mo6S3Br6: An Anisotropic 2D Superatomic Semiconductor
Abstract
Two‐dimensional (2D) van der Waals materials with in‐plane anisotropy are of great interest for directional transport of charge and energy, as exemplified by recent studies on black phosphorus and α‐phase molybdenum trioxide (α‐MO3). Here, a layered van der Waals semiconductor with in‐plane anisotropy built upon the superatomic units of Mo6S3Br6 is reported. This material possesses robust 2D characteristics with a direct gap of 1.64 eV, as determined by scanning tunneling spectroscopy and first‐principles calculations. Polarization‐dependent Raman spectroscopy measurement and density functional theory calculation reveal strong in‐plane anisotropy. These results suggest an effective strategy to explore anisotropic 2D electronic and optoelectronic properties from superatomic building blocks with multifunctionality, emergent properties, and hierarchical control.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jun 11, 2019
- Source ID
- 10.1002/adfm.201902951
Entities
People
- Avalon H Dismukes
- Bonnie Choi
- Colin Nuckolls
- Daniel W. Paley
- Daniele Meggiolaro
- Feifan Wang
- Filippo De Angelis
- Kihong Lee
- Patrick Batail
- Xavier Roy
- Xiaoyang Zhu
- Xinjue Zhong
Organizations
- Air Force Office of Scientific Research
- Columbia University