Manipulation of the Electronic State of Mott Iridate Superlattice through Protonation Induced Electron‐Filling
Abstract
Spin‐orbit‐coupled Mott iridates show great similarity with parent compounds of superconducting cuprates, attracting extensive research interest especially for their electron‐doped states. However, previous experiments have been largely limited within a small doping range due to the absence of effective dopants, and therefore the electron‐doped phase diagram remains elusive. Here, an ionic‐liquid‐gating‐induced protonation method is utilized to achieve electron‐doping into a 5d Mott‐insulator built with a SrIrO3/SrTiO3 superlattice (SL), and a systematic mapping of its electron‐doped phase diagram is achieved with the evolution of the iridium valence state from 4+ to 3+, equivalent to doping of one electron per iridium ion. Along increasing doping level, the parent Mott‐insulator is first turned into a localized metallic state with gradually suppressed magnetic ordering, and then further evolves into a nonmagnetic band insulating state. This work forms an important step forward for the study of electron‐doped Mott iridate systems, and the strategy of manipulating the band filling in an artificially designed SL structure can be readily extended into other systems with more exotic states to explore.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Apr 15, 2021
- Source ID
- 10.1002/adfm.202100261
Entities
People
- Fang Yin
- Hua Zhou
- Hui Cao
- Jia Li
- Jian Liu
- Jianbing Zhang
- Junyi Yang
- Lin Hao
- Meng Wang
- Nianlong Zou
- Nianpeng Lu
- Pu Yu
- Shengchun Shen
- Xin Yang
- Yongshun Wu
Organizations
- Argonne National Laboratory
- Beijing Municipal Natural Science Foundation
- Institute of Physics
- National Natural Science Foundation of China
- Office of Naval Research
- RIKEN Center for Emergent Matter Science
- Tsinghua University
- University of Tennessee