Controllable p‐Type Doping of 2D WSe2 via Vanadium Substitution
Abstract
Scalable substitutional doping of 2D transition metal dichalcogenides is a prerequisite to developing next‐generation logic and memory devices based on 2D materials. To date, doping efforts are still nascent. Here, scalable growth and vanadium (V) doping of 2D WSe2 at front‐end‐of‐line and back‐end‐of‐line compatible temperatures of 800 and 400 °C, respectively, is reported. A combination of experimental and theoretical studies confirm that vanadium atoms substitutionally replace tungsten in WSe2, which results in p‐type doping via the introduction of discrete defect levels that lie close to the valence band maxima. The p‐type nature of the V dopants is further verified by constructed field‐effect transistors, where hole conduction becomes dominant with increasing vanadium concentration. Hence, this study presents a method to precisely control the density of intentionally introduced impurities, which is indispensable in the production of electronic‐grade wafer‐scale extrinsic 2D semiconductors.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jul 23, 2021
- Source ID
- 10.1002/adfm.202105252
Entities
People
- Anne Marie Z Tan
- Azimkhan Kozhakhmetov
- Bruno Schuler
- Furkan Türker
- Jessica Kachian
- Joshua A. Robinson
- Nasim Alem
- Oliver Gröning
- Rahul Pendurthi
- Richard G. Hennig
- Saiphaneendra Bachu
- Samuel Stolz
- Saptarshi Das
Organizations
- Army Research Office
- Intel Corporation
- Nanyang Technological University
- National Science Foundation
- Pennsylvania State University
- Swiss Federal Laboratories for Materials Science and Technology
- Swiss National Science Foundation
- University of Florida