RKKY Exchange Bias Mediated Ultrafast All‐Optical Switching of a Ferromagnet

Abstract

The discovery of ultrafast helicity‐independent all‐optical switching (HI‐AOS), as well as picosecond all‐electrical switching of a ferrimagnet, has inspired the ultrafast spintronics community to explore ultrafast switching of a ferromagnet to achieve practical ultrafast storage and memory devices. Two explored mechanisms of HI‐AOS of a ferromagnet in ferromagnet‐ferrimagnet heterostructure are: a) exploiting the indirect exchange coupling with and b) injection of non‐local spin current originated from a switching ferrimagnet. In this manuscript, exchange mediated HI‐AOS of a Ruderman–Kittel–Kasuya–Yosida (RKKY) exchange coupled “[Co/Pt]‐multilayers/Pt spacer/CoGd” heterostructure is demonstrated. The authors have measured layer‐resolved static magnetic properties, single‐shot HI‐AOS, and magnetization dynamics of the ferromagnetic Co/Pt multilayers (MLs), that are ferromagnetically or antiferromagnetically coupled with ferrimagnetic CoGd layers. Time‐resolved magnetization dynamics reveal a 3.5 ps switching time of the Co/Pt MLs, which is the fastest switching of a ferromagnet reported to date. Employing an extended microscopic three‐temperature model, the temporal dynamics of the exchange coupled ferromagnet–ferrimagnet heterostructure are simulated, qualitatively and quantitatively explaining the experimental switching phenomena. This work experimentally as well as theoretically establishes the mechanism of exchange mediated all‐optical switching of ferromagnet‐ferrimagnet heterostructures, which can be integrated with a magnetic tunnel junction for efficient reading after ultrafast energy‐efficient switching.

Document Details

Document Type
Pub Defense Publication
Publication Date
Nov 16, 2021
Source ID
10.1002/adfm.202107490

Entities

People

  • Akshay Pattabi
  • Debanjan Polley
  • Hyejin Jang
  • Jeffrey Bokor
  • Jyotirmoy Chatterjee
  • Sayeef Salahuddin

Organizations

  • Lawrence Berkeley National Laboratory
  • United States Department of Energy

Tags

Fields of Study

  • Physics

Readers

  • Materials Science and Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Superconducting Magnet Technology

Technology Areas

  • Microelectronics