Design Rules for Addressing Material Asymmetry Induced by Templated Epitaxy for Integrated Heteroepitaxial On‐Chip Light Sources
Abstract
Integrating quantum dot (QD) gain elements onto Si photonic platforms via direct epitaxial growth is the ultimate solution for realizing on‐chip light sources. Tremendous improvements in device performance and reliability have been demonstrated in devices grown on planar Si substrates in the last few years. Recently, electrically pumped QD lasers deposited in narrow oxide pockets in a butt‐coupled configuration and on‐chip coupling have been realized on patterned Si photonic wafers. However, the device yield and reliability, which ultimately determines the scalability of such technology, are limited by material uniformity. Here, detailed analysis is performed, both experimentally and theoretically, on the material asymmetry induced by the pocket geometry and provides unambiguous evidence suggesting that all pockets should be aligned to the [1 ] direction of the III‐V crystal for high yield, high performance, and scalable on‐chip light sources at 300 mm scale.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jul 08, 2023
- Source ID
- 10.1002/adfm.202304645
Entities
People
- Chen Shang
- Eamonn T Hughes
- Gerald Leake
- John E. Bowers
- Kaiyin Feng
- Marc Fouchier
- Matthew R. Begley
- Peter Ludewig
- Rosalyn Koscica
- William He
- Yating Wan
Organizations
- Air Force Research Laboratory
- Attolight AG
- King Abdullah University of Science and Technology
- SUNY Polytechnic Institute
- United States Air Force
- University of California, Santa Barbara