Flexible Gallium Nitride for High‐Performance, Strainable Radio‐Frequency Devices
Abstract
Flexible gallium nitride (GaN) thin films can enable future strainable and conformal devices for transmission of radio‐frequency (RF) signals over large distances for more efficient wireless communication. For the first time, strainable high‐frequency RF GaN devices are demonstrated, whose exceptional performance is enabled by epitaxial growth on 2D boron nitride for chemical‐free transfer to a soft, flexible substrate. The AlGaN/GaN heterostructures transferred to flexible substrates are uniaxially strained up to 0.85% and reveal near state‐of‐the‐art values for electrical performance, with electron mobility exceeding 2000 cm2 V−1 s−1 and sheet carrier density above 1.07 × 1013 cm−2. The influence of strain on the RF performance of flexible GaN high‐electron‐mobility transistor (HEMT) devices is evaluated, demonstrating cutoff frequencies and maximum oscillation frequencies greater than 42 and 74 GHz, respectively, at up to 0.43% strain, representing a significant advancement toward conformal, highly integrated electronic materials for RF applications.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Nov 02, 2017
- Source ID
- 10.1002/adma.201701838
Entities
People
- Benji Maruyama
- Dennis E. Walker Jr.
- Donald L. Dorsey
- Elizabeth A. Moore
- Eric R. Heller
- Kelson D. Chabak
- Michael Snure
- Nicholas R Glavin
- Qing Paduano
- Timothy A. Prusnick
Organizations
- Air Force Office of Scientific Research
- Air Force Research Laboratory