Quaternary 2D Transition Metal Dichalcogenides (TMDs) with Tunable Bandgap

Abstract

Alloying/doping in 2D material is important due to wide range bandgap tunability. Increasing the number of components would increase the degree of freedom which can provide more flexibility in tuning the bandgap and also reduces the growth temperature. Here, synthesis of quaternary alloys MoxW1−xS2ySe2(1−y) is reported using chemical vapor deposition. The composition of alloys is tuned by changing the growth temperatures. As a result, the bandgap can be tuned which varies from 1.61 to 1.85 eV. The detailed theoretical calculation supports the experimental observation and shows a possibility of wide tunability of bandgap.

Document Details

Document Type
Pub Defense Publication
Publication Date
Jul 14, 2017
Source ID
10.1002/adma.201702457

Entities

People

  • Alex Kutana
  • Amey Apte
  • Boris I Yakobson
  • Chandra Sekhar Tiwary
  • Jordan A Hachtel
  • Juan Carlos Idrobo
  • Pulickel Ajayan
  • Robert Vajtai
  • Sandhya Susarla
  • Vidya Kochat

Organizations

  • Air Force Office of Scientific Research
  • Defense Advanced Research Projects Agency
  • Oak Ridge National Laboratory
  • Rice University

Tags

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Surface Engineering/Surface Coating Technology.
  • Theoretical Analysis.