Silicon Oxide (SiOx): A Promising Material for Resistance Switching?
Abstract
Interest in resistance switching is currently growing apace. The promise of novel high‐density, low‐power, high‐speed nonvolatile memory devices is appealing enough, but beyond that there are exciting future possibilities for applications in hardware acceleration for machine learning and artificial intelligence, and for neuromorphic computing. A very wide range of material systems exhibit resistance switching, a number of which—primarily transition metal oxides—are currently being investigated as complementary metal–oxide–semiconductor (CMOS)‐compatible technologies. Here, the case is made for silicon oxide, perhaps the most CMOS‐compatible dielectric, yet one that has had comparatively little attention as a resistance‐switching material. Herein, a taxonomy of switching mechanisms in silicon oxide is presented, and the current state of the art in modeling, understanding fundamental switching mechanisms, and exciting device applications is summarized. In conclusion, silicon oxide is an excellent choice for resistance‐switching technologies, offering a number of compelling advantages over competing material systems.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jun 29, 2018
- Source ID
- 10.1002/adma.201801187
Entities
People
- Adnan Mehonic
- Alessandro Bricalli
- Alexander L. Shluger
- Anthony Kenyon
- Can Li
- Daniele Ielmini
- David Gao
- Elia Ambrosi
- Enrique Miranda
- Ilia Valov
- J. Joshua Yang
- Qiangfei Xia
Organizations
- Autonomous University of Barcelona
- Defense Advanced Research Projects Agency
- Engineering and Physical Sciences Research Council
- European Research Council
- Leverhulme Trust
- Polytechnic University of Milan
- RWTH Aachen University
- Royal Academy of Engineering
- University College London
- University of Massachusetts