Gate‐Tunable Graphene–WSe2 Heterojunctions at the Schottky–Mott Limit
Abstract
Metal–semiconductor interfaces, known as Schottky junctions, have long been hindered by defects and impurities. Such imperfections dominate the electrical characteristics of the junction by pinning the metal Fermi energy. Here, a graphene–WSe2 p‐type Schottky junction, which exhibits a lack of Fermi level pinning, is studied. The Schottky junction displays near‐ideal diode characteristics with large gate tunability and small leakage currents. Using a gate electrostatically coupled to the WSe2 channel to tune the Schottky barrier height, the Schottky–Mott limit is probed in a single device. As a special manifestation of the tunable Schottky barrier, a diode with a dynamically controlled ideality factor is demonstrated.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Apr 22, 2019
- Source ID
- 10.1002/adma.201901392
Entities
People
- Ji Ung Lee
- Kenji Watanabe
- Prathamesh Dhakras
- Samuel W LaGasse
- Takashi Taniguchi
Organizations
- National Institute for Materials Science
- National Science Foundation
- State University of New York
- United States Naval Research Laboratory