A Low‐Current and Analog Memristor with Ru as Mobile Species
Abstract
The switching parameters and device performance of memristors are predominately determined by their mobile species and matrix materials. Devices with oxygen or oxygen vacancies as the mobile species usually exhibit a great retention but also need a relatively high switching current (e.g., >30 µA), while devices with Ag or Cu as cation mobile species do not require a high switching current but usually show a poor retention. Here, Ru is studied as a new type of mobile species for memristors to achieve low switching current, fast speed, good reliability, scalability, and analog switching property simultaneously. An electrochemical metallization‐like memristor with a stack of Pt/Ta2O5/Ru is developed. Migration of Ru ions is revealed by energy‐dispersive X‐ray spectroscopy mapping and in situ transmission electron microscopy within a sub‐10 nm active device area before and after switching. The results open up a new avenue to engineer memristors for desired properties.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 27, 2020
- Source ID
- 10.1002/adma.201904599
Entities
People
- J. Joshua Yang
- Jiaming Zhang
- Jung Ho Yoon
- Navnidhi Upadhyay
- Peng Lin
- Peng Yan
- Qiangfei Xia
- Yuzi Liu
Organizations
- Air Force Office of Scientific Research
- Air Force Research Laboratory
- Argonne National Laboratory
- Hewlett Packard Labs
- Korea Institute of Science and Technology
- Ministry of Education of the Republic of Korea
- National Research Foundation of Korea
- Office of Science
- United States Department of Energy
- University of Massachusetts