Magneto‐Memristive Switching in a 2D Layer Antiferromagnet
Abstract
Memristive devices whose resistance can be hysteretically switched by electric field or current are intensely pursued both for fundamental interest as well as potential applications in neuromorphic computing and phase‐change memory. When the underlying material exhibits additional charge or spin order, the resistive states can be directly coupled, further allowing electrical control of the collective phases. The observation of abrupt, memristive switching of tunneling current in nanoscale junctions of ultrathin CrI3, a natural layer antiferromagnet, is reported here. The coupling to spin order enables both tuning of the resistance hysteresis by magnetic field and electric‐field switching of magnetization even in multilayer samples.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Oct 24, 2019
- Source ID
- 10.1002/adma.201905433
Entities
People
- Adam W Tsen
- Bowen Yang
- Chenghe Li
- Hechang Lei
- Hyun Ho Kim
- Jie Shan
- Kin Fai Mak
- Shangjie Tian
- Shazhou Zhong
- Shengwei Jiang
Organizations
- Air Force Office of Scientific Research
- Canada First Research Excellence Fund
- Cornell University
- National Natural Science Foundation of China
- National Research Foundation of Korea
- Office of Naval Research
- Renmin University of China
- University of Waterloo