Ferroelectric Domain Wall Motion in Freestanding Single‐Crystal Complex Oxide Thin Film
Abstract
Ferroelectric domain walls in single‐crystal complex oxide thin films are found to be orders of magnitude slower when the interfacial bonds with the heteroepitaxial substrate are broken to create a freestanding film. This drastic change in domain wall kinetics does not originate from the alteration of epitaxial strain; rather, it is correlated with the structural ripples at mesoscopic length scale and associated flexoelectric effects induced in the freestanding films. In contrast, the effects of the bond‐breaking on the local static ferroelectric properties of both top and bottom layers of the freestanding films, such as domain wall width and spontaneous polarization, are modest and governed by the change in epitaxy‐induced compressive strain.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Dec 09, 2019
- Source ID
- 10.1002/adma.201907036
Entities
People
- Amanda K. Petford‐long
- Claudy R. Serrao
- Dillon D. Fong
- Jaegyu Kim
- Liliana Stan
- Martin V Holt
- Mathew J Cherukara
- Saidur R Bakaul
- Sayeef Salahuddin
- Seungbum Hong
- Tao Zhou
Organizations
- Argonne National Laboratory
- KAIST
- Office of Basic Energy Sciences
- Office of Naval Research
- Office of Science
- United States Department of Energy