Memristive Behavior Enabled by Amorphous–Crystalline 2D Oxide Heterostructure
Abstract
The emergence of memristive behavior in amorphous–crystalline 2D oxide heterostructures, which are synthesized by atomic layer deposition (ALD) of a few‐nanometer amorphous Al2O3 layers onto atomically thin single‐crystalline ZnO nanosheets, is demonstrated. The conduction mechanism is identified based on classic oxygen vacancy conductive channels. ZnO nanosheets provide a 2D host for oxygen vacancies, while the amorphous Al2O3 facilitates the generation and stabilization of the oxygen vacancies. The conduction mechanism in the high‐resistance state follows Poole–Frenkel emission, and in the the low‐resistance state is fitted by the Mott–Gurney law. From the slope of the fitting curve, the mobility in the low‐resistance state is estimated to be ≈2400 cm2 V−1 s−1, which is the highest value reported in semiconductor oxides. When annealed at high temperature to eliminate oxygen vacancies, Al is doped into the ZnO nanosheet, and the memristive behavior disappears, further confirming the oxygen vacancies as being responsible for the memristive behavior. The 2D heterointerface offers opportunities for new design of high‐performance memristor devices.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Apr 21, 2020
- Source ID
- 10.1002/adma.202000801
Entities
People
- J. Leon Shohet
- Jun Li
- Panpan Xue
- Paul M. Voyles
- Pei Zhang
- Tzu‐hsuan Chang
- Xin Yin
- Xudong Wang
- Yin Long
- Yizhan Wang
- Zhenqiang Ma
Organizations
- Army Research Office
- National Science Foundation
- Office of Basic Energy Sciences
- United States Department of Energy
- University of Wisconsin–Madison