A Library of Atomically Thin 2D Materials Featuring the Conductive‐Point Resistive Switching Phenomenon

Abstract

Non‐volatile resistive switching (NVRS) is a widely available effect in transitional metal oxides, colloquially known as memristors, and of broad interest for memory technology and neuromorphic computing. Until recently, NVRS was not known in other transitional metal dichalcogenides (TMDs), an important material class owing to their atomic thinness enabling the ultimate dimensional scaling. Here, various monolayer or few‐layer 2D materials are presented in the conventional vertical structure that exhibit NVRS, including TMDs (MX2, M = transitional metal, e.g., Mo, W, Re, Sn, or Pt; X = chalcogen, e.g., S, Se, or Te), TMD heterostructure (WS2/MoS2), and an atomically thin insulator (h‐BN). These results indicate the universality of the phenomenon in 2D non‐conductive materials, and feature low switching voltage, large ON/OFF ratio, and forming‐free characteristic. A dissociation–diffusion–adsorption model is proposed, attributing the enhanced conductance to metal atoms/ions adsorption into intrinsic vacancies, a conductive‐point mechanism supported by first‐principle calculations and scanning tunneling microscopy characterizations. The results motivate further research in the understanding and applications of defects in 2D materials.

Document Details

Document Type
Pub Defense Publication
Publication Date
Dec 28, 2020
Source ID
10.1002/adma.202007792

Entities

People

  • Deji Akinwande
  • Emmanuel Okogbue
  • Harry Chou
  • Jack C. Lee
  • Jianping Shi
  • Liangbo Liang
  • Ruijing Ge
  • Saban M. Hus
  • Sanjay K. Banerjee
  • Xiaohan Wu
  • Yanfeng Zhang
  • Yeonwoong Jung
  • Yuqian Gu

Organizations

  • Army Research Office
  • Korea Institute of Energy Technology Evaluation and Planning
  • Ministry of Trade, Industry and Energy
  • National Natural Science Foundation of China
  • National Science Foundation
  • Oak Ridge National Laboratory
  • Office of Science
  • Peking University
  • Program 973
  • United States Department of Energy
  • University of Central Florida
  • University of Texas at Austin
  • Wuhan University

Tags

Fields of Study

  • Physics

Readers

  • Integrated Circuit Design and Technology.
  • Materials Science and Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene