Manipulating Exchange Bias in a Van der Waals Ferromagnet
Abstract
Spintronics applications of thin‐film magnets require control and design of specific magnetic properties. Exchange bias, originating from the pinning of spins in a ferromagnet by these of an antiferromagnet, is a part of the highly important elements for spintronics applications. Here, an exchange bias of ≈90 mT in a van der Waals ferromagnet encapsulated by two antiferromagnets at 5 K, the value of which is highly tunable by the field coolings, is reported. The non‐antisymmetric dependence of exchange bias on field cooling is explained through considering an uncompensated interfacial magnetic layer of an antiferromagnet with a noncollinear spin texture, and a weak antiferromagnetic order in the oxidized layer, at two ferromagnet/antiferromagnet interfaces. This work opens up new routes toward designing and controlling 2D spintronic devices made of atomically thin van der Waals magnets.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Feb 07, 2022
- Source ID
- 10.1002/adma.202105266
Entities
People
- Kang L. Wang
- Lei Pan
- Wei Wang
- Yingying Wu
Organizations
- Nanjing Tech University
- National Science Foundation
- United States Army Research Laboratory
- University of California, Los Angeles