Assembling Diverse Skyrmionic Phases in Fe3GeTe2 Monolayers

Abstract

Skyrmionic magnetic states are promising in advanced spintronics. This topic is experiencing recent progress in 2D magnets, with, for example, a near 300 K Curie temperature observed in Fe3GeTe2. However, despite previous studies reporting skyrmions in Fe3GeTe2, such a system remains elusive, since it has been reported to host either Néel‐type or Bloch‐type textures, while a net Dzyaloshinskii–Moriya interaction (DMI) cannot occur in this compound for symmetry reasons. It is thus desirable to develop an accurate model to deeply understand Fe3GeTe2. Here, a newly developed method adopting spin invariants is applied to build a first‐principle‐based Hamiltonian, which predicts colorful topological defects assembled from the unit of Bloch lines, and reveals the critical role of specific forms of fourth‐order interactions in Fe3GeTe2. Rather than the DMI, it is the multiple fourth‐order interactions, with symmetry and spin–orbit couplings considered, that stabilize both Néel‐type and Bloch‐type skyrmions, as well as antiskyrmions, without any preference for clockwise versus counterclockwise spin rotation. This study also demonstrates that spin invariants can be used as a general approach to study complex magnetic interactions.

Document Details

Document Type
Pub Defense Publication
Publication Date
Feb 10, 2022
Source ID
10.1002/adma.202107779

Entities

People

  • Changsong Xu
  • Hongjun Xiang
  • Laurent Bellaiche
  • Peng Chen
  • Xueyang Li
  • Yun Zhang

Organizations

  • Baoji University of Arts and Sciences
  • Defense Advanced Research Projects Agency
  • Fudan University
  • National Natural Science Foundation of China
  • National Science Foundation
  • United States Department of Defense
  • University of Arkansas

Tags

Fields of Study

  • Physics

Readers

  • Microwave Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Systems Analysis and Design

Technology Areas

  • Microelectronics
  • Space