Quantum‐Engineered Devices Based on 2D Materials for Next‐Generation Information Processing and Storage
Abstract
As an approximation to the quantum state of solids, the band theory, developed nearly seven decades ago, fostered the advance of modern integrated solid‐state electronics, one of the most successful technologies in the history of human civilization. Nonetheless, their rapidly growing energy consumption and accompanied environmental issues call for more energy‐efficient electronics and optoelectronics, which necessitate the exploration of more advanced quantum mechanical effects, such as band‐to‐band tunneling, spin–orbit coupling, spin–valley locking, and quantum entanglement. The emerging 2D layered materials, featured by their exotic electrical, magnetic, optical, and structural properties, provide a revolutionary low‐dimensional and manufacture‐friendly platform (and many more opportunities) to implement these quantum‐engineered devices, compared to the traditional electronic materials system. Here, the progress in quantum‐engineered devices is reviewed and the opportunities/challenges of exploiting 2D materials are analyzed to highlight their unique quantum properties that enable novel energy‐efficient devices, and useful insights to quantum device engineers and 2D‐material scientists are provided.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Oct 03, 2022
- Source ID
- 10.1002/adma.202109894
Entities
People
- Arnab Pal
- Chao‐hui Yeh
- Kaustav Banerjee
- Kunjesh Agashiwala
- Shuo Zhang
- Tanmay Chavan
- Wei Cao
Organizations
- Air Force Office of Scientific Research
- Army Research Office
- National Science Foundation
- University of California
- Zhejiang University