Scalable Synthesis of Monolayer Hexagonal Boron Nitride on Graphene with Giant Bandgap Renormalization
Abstract
Monolayer hexagonal boron nitride (hBN) has been widely considered a fundamental building block for 2D heterostructures and devices. However, the controlled and scalable synthesis of hBN and its 2D heterostructures has remained a daunting challenge. Here, an hBN/graphene (hBN/G) interface‐mediated growth process for the controlled synthesis of high‐quality monolayer hBN is proposed and further demonstrated. It is discovered that the in‐plane hBN/G interface can be precisely controlled, enabling the scalable epitaxy of unidirectional monolayer hBN on graphene, which exhibits a uniform moiré superlattice consistent with single‐domain hBN, aligned to the underlying graphene lattice. Furthermore, it is identified that the deep‐ultraviolet emission at 6.12 eV stems from the 1s‐exciton state of monolayer hBN with a giant renormalized direct bandgap on graphene. This work provides a viable path for the controlled synthesis of ultraclean, wafer‐scale, atomically ordered 2D quantum materials, as well as the fabrication of 2D quantum electronic and optoelectronic devices.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Apr 21, 2022
- Source ID
- 10.1002/adma.202201387
Entities
People
- Ayush Pandey
- David Laleyan
- Diana Y. Qiu
- Ding Wang
- Emmanouil Kioupakis
- Jay Gupta
- Jiseok Gim
- John T. Heron
- Joseph P Corbett
- Mackillo Kira
- Nguyen M. Vu
- Ping Wang
- Qiannan Wen
- Robert Hovden
- William H. Koll
- Woncheol Lee
- Yuanpeng Wu
- Zetian Mi
Organizations
- Army Research Office
- Kwanjeong Educational Foundation
- National Science Foundation
- Office of Science
- Ohio State University
- United States Department of Energy
- University of Michigan
- W. M. Keck Foundation
- Yale University