Piezoelectricity across 2D Phase Boundaries
Abstract
Piezoelectricity in low‐dimensional materials and metal–semiconductor junctions has attracted recent attention. Herein, a 2D in‐plane metal–semiconductor junction made of multilayer 2H and 1T′ phases of molybdenum(IV) telluride (MoTe2) is investigated. Strong piezoelectric response is observed using piezoresponse force microscopy at the 2H–1T′ junction, despite that the multilayers of each individual phase are weakly piezoelectric. The experimental results and density functional theory calculations suggest that the amplified piezoelectric response observed at the junction is due to the charge transfer across the semiconducting and metallic junctions resulting in the formation of dipoles and excess charge density, allowing the engineering of piezoelectric response in atomically thin materials.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Aug 24, 2022
- Source ID
- 10.1002/adma.202206425
Entities
People
- Anand B Puthirath
- Aravind Krishnamoorthy
- David C. Moore
- David E. Sanchez
- Dmitri Litvinov
- Farnaz Safi Samghabadi
- Fu Zhang
- Hanyu Zhu
- Jiawei Lai
- Mauricio Terrones
- Nicholas R Glavin
- Priya Vashishta
- Pulickel Ajayan
- Robert Vajtai
- Rui Xu
- Tianyi Zhang
- Venkataraman Swaminathan
- Xiang Zhang
Organizations
- Air Force Office of Scientific Research
- Air Force Research Laboratory
- National Science Foundation
- Pennsylvania State University
- Rice University
- University of Houston
- University of Southern California