Monolithically Integrated Circuits from Functional Oxides
Abstract
The rich array of conventional and exotic electronic properties that can be generated by oxide heterostructures is of great potential value for device applications. However, only single transistors bare of any circuit functionality have been realized from complex oxides. Here, monolithically‐integrated n‐type metal‐oxide‐semiconductor logic circuits are reported that utilize the two‐dimensional electron liquid generated at the LaAlO3/SrTiO3 interface. Providing the capability to process the signals of functional oxide devices such as sensors directly on oxide chips, these results illustrate the practicability and the potential of oxide electronics.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Nov 24, 2013
- Source ID
- 10.1002/admi.201300031
Entities
People
- Benjamin Förg
- Carsten Woltmann
- Christoph Richter
- David A. Muller
- Georg Pfanzelt
- Hans Boschker
- Jochen Mannhart
- Julia Mundy
- Jürgen Weis
- Marcus Rommel
- Rainer Jany
- Thomas Reindl
- Ulrike Waizmann
Organizations
- Army Research Office
- Augsburg University
- Cornell University
- German Research Foundation
- Max Planck Institute for Solid State Research