Spiral Growth of SnSe2 Crystals by Chemical Vapor Deposition
Abstract
Although a lot of work has been reported on the growth and properties of 2D atomic layered materials, the growth mechanism for these crystals via the chemical vapor deposition method (CVD) has remained elusive. Here, a screw dislocation–driven spiral growth of SnSe2 crystal flakes via CVD is reported. The polymorph of as‐synthesized SnSe2 crystals is verified as 1T‐phase by both experimental characterization and theoretical calculation. The density functional theory study reveals morphology transformation during the growth process while phase‐field modeling unravels the screw dislocation propagation to form the pyramid‐like structure of SnSe2. The optical band gap of SnSe2 crystals relates to an indirect band gap of 1.0 eV. The photodetector devices based on SnSe2 crystals exhibit high responsivity and ultrafast response time in the microsecond regime.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jul 27, 2016
- Source ID
- 10.1002/admi.201600383
Entities
People
- Bo Li
- Boris I Yakobson
- Hua Guo
- Jiawei Lai
- Jing Zhang
- Jingjie Wu
- Jun Lou
- Kuntal Chatterjee
- Ming Tang
- Pulickel Ajayan
- Robert Vajtai
- Sidong Lei
- Yang Liu
- Yingchao Yang
- Zehua Jin
- Zhili Hu
Organizations
- Air Force Office of Scientific Research
- Rice University