Lateral Graphene p–n Junctions Realized by Nanoscale Bipolar Doping Using Surface Electric Dipoles and Self‐Organized Molecular Anions
Abstract
Lateral p–n junctions take the unique advantages of 2D materials, such as graphene, to enable single‐atomic layer microelectronics. A major challenge in fabrication of the lateral p–n junctions is in the control of electronic properties on a 2D atomic sheet with nanometer precision. Herein, a facile approach that employs decoration of molecular anions of bis‐(trifluoromethylsulfonyl)‐imide (TFSI) to generate p‐doping on the otherwise n‐doped graphene by positively polarized surface electric dipoles (pointing toward the surface) formed on the surface oxygen‐deficient layer “intrinsic” to an oxide ferroelectric back gate is reported. The characteristic double conductance minima V Dirac− and V Dirac + illustrated in the obtained lateral graphene p–n junctions can be tuned in the range of −1 to 0 V and 0 to +1 V, respectively, by controlling the TFSI anions and surface dipoles quantitatively. The unique advantage of this approach is in adoption of polarity‐controlled molecular ion attachment on graphene, which could be further developed for various lateral electronics on 2D materials.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Nov 04, 2018
- Source ID
- 10.1002/admi.201801380
Entities
People
- Chunrui Ma
- Guangliang Hu
- Judy Z. Wu
- Maogang Gong
- Ming Liu
- Mohammed Alamri
- Yong Zhang
Organizations
- Army Research Office
- China Postdoctoral Science Foundation
- National Aeronautics and Space Administration
- National Natural Science Foundation of China
- National Science Foundation
- University of Kansas
- Xi'an Jiaotong University