Incorporating Niobium in MoS2 at BEOL‐Compatible Temperatures and its Impact on Copper Diffusion Barrier Performance
Abstract
The continuous scaling of transistors has led to unprecedented challenges for interconnect technologies. Conventional barriers fail when thinned below 4 nm; therefore, novel materials and back‐end‐of‐line (BEOL) compatible synthesis are urgently needed. 2D transition metal dichalcogenides present a unique opportunity for addressing the scaling of interconnects. Here, nanometer thick Nb‐incorporated MoS2 is successfully synthesized at BEOL compatible temperatures and their abilities of blocking Cu atom diffusion are investigated. Nb incorporation of MoS2 is systematically studied at 450 °C and its growth dynamics is compared with those carried out at high temperatures. The addition of a few percent Nb in MoS2 enhances breakdown time by more than 100×, reaching a failure time >12 500 s under the electric field of 7 MV cm−1. These results suggest that integration of Nb‐incorporated MoS2 in electronic technologies is a promising route for the sub‐5 nm technology node.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Sep 30, 2019
- Source ID
- 10.1002/admi.201901055
Entities
People
- Chun‐li Lo
- Fu Zhang
- Joshua A. Robinson
- Mauricio Terrones
- Ram Krishna Ghosh
- Rui Zhao
- Theresia Knobloch
- Zhihong Chen
Organizations
- Air Force Office of Scientific Research
- Austrian Science Fund
- Jawaharlal Nehru University
- Pennsylvania State University
- Purdue University
- Semiconductor Research Corporation
- TU Wien