Direct Observation of Large Atomic Polar Displacements in Epitaxial Barium Titanate Thin Films

Abstract

The development of ferroelectric perovskite oxides having a controlled polarization direction is an ongoing and challenging topic of research. Here direct observation of large atomic polar displacements, which correspond to a polar density of ≈0.9 C m−2 pointing upward, in an epitaxial BaTiO3 film grown by molecular beam epitaxy on a SrTiO3 substrate is reported. Aberration‐corrected scanning transmission electron microscopy is used to map the polarization displacement with unit‐cell resolution. Oxygen vacancies and other types of defects are examined and mapped using electron energy‐loss near‐edge structure analysis. The contributions from strain, strain gradient, and defects are quantitatively modeled in order to explain the large polarization. Calculations show that strain (through a defect dipole‐enhanced polarization) creates the large atomic polar displacements, and strain gradient (through inverse Vegard electrochemical strain effect) compensates the polarization. These two effects may explain the preferred polarization direction and the anomalous flexoelectric effect in ferroelectric thin films.

Document Details

Document Type
Pub Defense Publication
Publication Date
Jun 17, 2020
Source ID
10.1002/admi.202000555

Entities

People

  • Chadwin Young
  • David J Smith
  • Hsinwei Wu
  • Jian Wang
  • John G Ekerdt
  • Martha R. Mccartney
  • Patrick Ponath
  • Sirong Lu
  • Toshihiro Aoki

Organizations

  • Air Force Office of Scientific Research
  • Arizona State University
  • University of Texas at Austin
  • University of Texas at Dallas

Tags

Fields of Study

  • Materials science
  • Physics

Readers

  • Materials Science and Engineering.
  • Robotics and Automation.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene