Three‐Dimensional Atomic‐Scale Tomography of Buried Semiconductor Heterointerfaces
Abstract
Atom probes generate three‐dimensional atomic‐scale tomographies of material volumes corresponding to the size of modern‐day solid‐state devices. Here, the capabilities of atom probe tomography are evaluated to analyze buried interfaces in semiconductor heterostructures relevant for electronic and quantum devices. Employing brute‐force search, the current dominant reconstruction protocol to generate tomographic three‐dimensional images from Atom Probe data is advanced to its limits. Using Si/SiGe heterostructure for qubits as a model system, the authors show that it is possible to extract interface properties like roughness and width that agree with transmission electron microscopy observations on the sub‐nanometer scale in an automated and highly reproducible manner. The demonstrated approach is a versatile method for atomic‐scale characterization of buried interfaces in semiconductor heterostructures.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Dec 01, 2022
- Source ID
- 10.1002/admi.202201189
Entities
People
- Brian Paquelet Wuetz
- Giordano Scappucci
- Lucas E. A. Stehouwer
- Oussama Moutanabbir
- Sebastian Koelling
Organizations
- Army Research Office
- Canada Foundation for Innovation
- Canada Research Chair
- Natural Sciences and Engineering Research Council
- Polytechnic School of Montreal