Ferroelectric Polarization‐Assisted Sensitive and High‐Power Photodetector in Broad Ultraviolet‐to‐Visible Range
Abstract
Light‐sensitive electronic devices based on semiconductor P–N junctions have been widely used as photodetectors and solar cells. In order to improve the overall performance of such photosensitive devices, new yet simple design is required. In this work, a simple sandwich structure is proposed by combining a new ferroelectric oxide Bi6FeCoTi3O18 with graphene. A highly sensitive photodetector is then realized benefiting from the ferroelectric polarization assisted charge separation, as well as from the unique features of graphene such as the extreme sensibility, ballistic transportation, and broadband absorption. The new device has a remarkable on–off response as high as 2 × 103% under a Xe light‐source irradiation. The ferroelectric polarization enhances the photoresponse by about 2 × 104% when compared with a reference sample. Additionally, the new device is sensitive to a wide‐spectrum from visible to ultraviolet, and is tolerant to high power of the incident light. This unique design opens up a new way to develop next‐generation photoelectric devices that can be both proficient and cost effective.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- May 22, 2017
- Source ID
- 10.1002/adom.201700158
Entities
People
- Dechao Meng
- Haoliang Huang
- Jianlin Wang
- Qixin Yang
- Randy J. Knize
- Xiaofang Zhai
- Yalin Lu
- Yu Liu
- Yu Yun
- Zhengping Fu
Organizations
- Air Force Office of Scientific Research
- Chinese Universities Scientific Fund
- Defense Threat Reduction Agency
- National Natural Science Foundation of China
- United States Air Force Academy
- University of Science and Technology of China