Seamless MoTe2 Homojunction PIN Diode toward 1300 nm Short‐Wave Infrared Detection
Abstract
Homojunction PN and PIN diodes based on 2D transition metal dichalcogenide (TMD) MoTe2 are reported in this work. Up to date, for PN junction diodes, type II‐based heterojunction diodes are mainly seen in report, but homojunction PN diodes using 2D‐layered materials are still rare although they enable seamless integration. Recently, hydrogen (H)‐doped n‐type MoTe2, achieved via atomic layer deposition (ALD) on top of a p‐type MoTe2 surface, was reported. Consequently, a lateral homojunction PN diode was realized by H‐doping. In fact, MoTe2‐based devices with a thickness on the order of nanometers can be applied for short‐wave infrared (SWIR) detection in the range of ≈1300 nm, a wavelength that Si‐based devices cannot properly address. Here, a seamless MoTe2 homojunction PIN diode is demonstrated, achieving the detection of visible to 1300 nm SWIR photons. This thin MoTe2 initially forms a PN junction by selective H‐doping, but a PIN diode is even obtained using two split gates. Compared to the PN diode mode, the PIN mode greatly enhances the photoresponse in the visible to 1300 nm wavelength range because of the increased built‐in electric field. The Franz–Keldysh effect is regarded strongly responsible for the effective absorption of 1300 nm SWIR photons in MoTe2. It is anticipated that this development may support Si photodetectors for integration on Si devices.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jun 27, 2019
- Source ID
- 10.1002/adom.201900768
Entities
People
- Chul‐ho Lee
- Han Sol Lee
- June Yeong Lim
- Kyunghwan Oh
- Sam Park
- Sanghyuck Yu
- Seongil Im
- Seongjin Hong
- Seunghoon Yang
- Yeonsu Jeong
Organizations
- Korea University
- National Research Foundation of Korea
- Semiconductor Research Corporation
- United States Naval Research Laboratory
- Yonsei University