Spintronic Terahertz Emission in Ultrawide Bandgap Semiconductor/Ferromagnet Heterostructures
Abstract
Recent successful integration of semiconductors into spintronic THz emitters has demonstrated a new pathway of control over terahertz (THz) radiation through ultrafast demagnetization dynamics. Here, the spintronic THz emission from different ultrawide bandgap (UWBG) semiconductors interfaced with ferromagnets is studied. The authors show that the Schottky barrier in the UWBG semiconductor AlN acts as a spin filter that increases the polarization of the spin current injected from the ferromagnet. Furthermore, the authors show that the two‐dimensional electron gas at the interface between Al0.25Ga0.75N and GaN enhances the magnitude of the emitted radiation due to the high spin‐to‐charge conversion efficiency induced by the Rashba effect that results in a hallmark asymmetry in emission amplitude. The results provide a framework for future engineering of semiconducting/ferromagnet heterostructures for ultrafast communications technologies beyond 5G.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Oct 31, 2022
- Source ID
- 10.1002/adom.202201535
Entities
People
- Aeron Mcconnell
- Andrew Comstock
- Dali Sun
- Dennis Szymanski
- Dovletgeldi Seyitliyev
- Eric Vetter
- Kenan Gundogdu
- Melike Biliroglu
- Pramod Reddy
- Ramón Collazo
- Ronny Kirste
- Zlatko Sitar
Organizations
- Air Force Office of Scientific Research
- National Science Foundation
- North Carolina State University