Broadband Photoconductive Sampling in Gallium Phosphide

Abstract

Direct measurements of the electric field of light enable new observations of light–matter interactions. In the near‐infrared and visible spectral ranges, this typically relies on techniques that exploit nonlinearities in gases or solids, which limits their sensitivity. Here, a method for the detection of broadband near‐infrared fields spanning more than one octave from 110 to 220 THz based on linear absorption in a semiconductor is demonstrated. This technique, which avoids complex vacuum setups and works under ambient conditions, employs linear photoconductive sampling (LPS) in gallium phosphide. Simulations reveal that the response function of LPS is concerned with the intensity envelope of the gate field, in contrast to electro‐optic sampling, relaxing the stringent temporal requirements on the gate pulse.

Document Details

Document Type
Pub Defense Publication
Publication Date
Feb 26, 2023
Source ID
10.1002/adom.202202994

Entities

People

  • Enrico Ridente
  • Johannes Schötz
  • Keyhan Golyari
  • Matthias F Kling
  • Michael Heynck
  • Mikhail Mamaikin
  • Muhammad Qasim
  • Najd Altwaijry
  • Nicholas Karpowicz
  • Vladislav S. Yakovlev

Organizations

  • Air Force Office of Scientific Research
  • German Research Foundation
  • Ludwig-Maximilians-Universität München
  • Max Planck Institute of Quantum Optics
  • Office of Science
  • SLAC National Accelerator Laboratory
  • Stanford University
  • United States Department of Energy

Tags

Readers

  • Optical Physics and Photonics.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics