3D Nanoarchitectured Hexagonal Boron Nitride with Integrated Single Photon Emitters
Abstract
Two‐dimensional (2D) hexagonal boron nitride (hBN) is one of the most promising candidates to host solid‐state single photon emitters (SPEs) for various quantum technologies. However, the 2D nature with an atomic‐scale thickness leads to inevitable challenges in spectral variability caused by substrate disturbance, lattice strain heterogeneity, and defect variation. Here, three‐dimensional (3D) nanoarchitectured hBN is reported with integrated SPEs from native defects generated during high‐temperature chemical vapor deposition (CVD). The 3D hBN has a quasi‐periodic gyroid minimal surface structure and is composed of a continuous 2D hBN sheet with built‐in convex and concave curvatures that promote the formation of optically active and thermally robust native defects. The free‐standing feature of the gyroid hBN with a nearly zero mean curvature can effectively eliminate the substrate disturbance and minimize lattice strain heterogeneity. As a result, naturally occurring defects with a narrow SPE spectral distribution can be created and activated as color centers in the 3D hBN, and the density of the SPEs can be tailored by CVD temperature.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jul 20, 2023
- Source ID
- 10.1002/adom.202300737
Entities
People
- Berend T Jonker
- Christopher Florencio Aleman
- Isaac Johnson
- Jiecheng Lyu
- Jiuhui Han
- Kathleen M McCreary
- Maximilian Niebur
- Mehmet A. Noyan
- Mingwei Chen
- Qingyang Gao
Organizations
- Johns Hopkins University
- National Science Foundation
- Tohoku University
- United States Naval Research Laboratory