Photonic Platforms Using In‐Plane Optical Anisotropy of Tin (II) Selenide and Black Phosphorus
Abstract
Among layered and 2D semiconductors, there are many with substantial optical anisotropy within individual layers, including group‐IV monochalcogenides MX (M = Ge or Sn and X = S or Se) and black phosphorous (bP). Recent work has suggested that the in‐plane crystal orientation in such materials can be switched (e.g., rotated through 90°) through an ultrafast, displacive (i.e., nondiffusive), nonthermal, and lower‐power mechanism by strong electric fields, due to in‐plane dielectric anisotropy. In theory, this represents a new mechanism for light‐controlling‐light in photonic integrated circuits (PICs). Herein, numerical device modeling is used to study device concepts based on switching the crystal orientation of SnSe and bP in PICs. Ring resonators and 1 × 2 switches with resonant conditions that change with the in‐plane crystal orientations SnSe and bP are simulated. The results are broadly applicable to 2D materials with ferroelectric and ferroelastic crystal structures including SnO, GeS, and GeSe.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Oct 07, 2021
- Source ID
- 10.1002/adpr.202100176
Entities
People
- Changming Wu
- Li Yang
- Linghan Zhu
- Mo Li
- R Jaramillo
- Seong Soon Jo
Organizations
- Massachusetts Institute of Technology
- National Science Foundation
- Office of Naval Research
- University of Washington
- Washington University in St. Louis