Strong Responsivity Enhancement of Quantum Dot‐in‐a‐Well Infrared Photodetectors Using Plasmonic Structures

Abstract

Detector responsivity enhancement from integrating optimized plasmonic structure layers into quantum dot‐in‐a‐well photodetectors is investigated by a finite integration technique‐based simulation. It is found that by including a 0.1 µm thick gold hole‐array layer onto a backside illuminated photodetector, the peak detector responsivity is enhanced by nearly a factor of 8. A 0.2 µm thick gold disk‐array layer improves the peak responsivity by around 15 instead. The calculated enhancement factors show a good agreement with experimental data by Gu et al.[1] and Lee et al.[2] Simulation method and analytical analysis accomplished in this paper provide a generalized approach to design optimal plasmonic structures integrated to various infrared detecting device configurations.

Document Details

Document Type
Pub Defense Publication
Publication Date
Nov 28, 2018
Source ID
10.1002/adts.201800143

Entities

People

  • Augustine Urbas
  • Clayton Fowler
  • Jiangfeng Zhou
  • Jun Oh Kim
  • Sang Jun Lee
  • Zahyun Ku

Organizations

  • Air Force Office of Scientific Research
  • Air Force Research Laboratory
  • Alfred P. Sloan Foundation
  • Korea Research Institute of Standards and Science
  • National Research Foundation of Korea
  • University of South Florida

Tags

Fields of Study

  • Materials science
  • Physics

Readers

  • Computational Modeling and Simulation
  • Nanocomposite Materials Science
  • Semiconductor Device Technology

Technology Areas

  • Quantum Computing