Synthesis of High‐Quality Graphene and Hexagonal Boron Nitride Monolayer In‐Plane Heterostructure on Cu–Ni Alloy
Abstract
Graphene/hexagonal boron nitride (h‐BN) monolayer in‐plane heterostructure offers a novel material platform for both fundamental research and device applications. To obtain such a heterostructure in high quality via controllable synthetic approaches is still challenging. In this work, in‐plane epitaxy of graphene/h‐BN heterostructure is demonstrated on Cu–Ni substrates. The introduction of nickel to copper substrate not only enhances the capability of decomposing polyaminoborane residues but also promotes graphene growth via isothermal segregation. On the alloy surface partially covered by h‐BN, graphene is found to nucleate at the corners of the as‐formed h‐BN grains, and the high growth rate for graphene minimizes the damage of graphene‐growth process on h‐BN lattice. As a result, high‐quality graphene/h‐BN in‐plane heterostructure with epitaxial relationship can be formed, which is supported by extensive characterizations. Photodetector device applications are demonstrated based on the in‐plane heterostructure. The success will have important impact on future research and applications based on this unique material platform.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- May 19, 2017
- Source ID
- 10.1002/advs.201700076
Entities
People
- Guangyuan Lu
- Guanhua Zhang
- Haomin Wang
- Julong Sun
- Jun Lou
- Mianheng Jiang
- Peng Yang
- Pulickel Ajayan
- Shuai Jia
- Tianru Wu
- Weibing Chen
- Xiaoming Xie
- Yingchao Yang
- Zehua Jin
Organizations
- Air Force Office of Scientific Research
- Central South University
- Chinese Academy of Sciences
- Rice University
- Robert A. Welch Foundation
- Shanghai Institute of Microsystem and Information Technology
- Shanghai Municipal Science and Technology Commission
- ShanghaiTech University
- University of Chinese Academy of Sciences