A Large Anisotropic Enhancement of the Charge Carrier Mobility of Flexible Organic Transistors with Strain: A Hall Effect and Raman Study
Abstract
Utilizing the intrinsic mobility–strain relationship in semiconductors is critical for enabling strain engineering applications in high‐performance flexible electronics. Here, measurements of Hall effect and Raman spectra of an organic semiconductor as a function of uniaxial mechanical strain are reported. This study reveals a very strong, anisotropic, and reversible modulation of the intrinsic (trap‐free) charge carrier mobility of single‐crystal rubrene transistors with strain, showing that the effective mobility of organic circuits can be enhanced by up to 100% with only 1% of compressive strain. Consistently, Raman spectroscopy reveals a systematic shift of the low‐frequency Raman modes of rubrene to higher (lower) frequencies with compressive (tensile) strain, which is indicative of a reduction (enhancement) of thermal molecular disorder in the crystal with strain. This study lays the foundation of the strain engineering in organic electronics and advances the knowledge of the relationship between the carrier mobility, low‐frequency vibrational modes, strain, and molecular disorder in organic semiconductors.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Nov 13, 2019
- Source ID
- 10.1002/advs.201901824
Entities
People
- Alejandro L Briseno
- Hee Taek Yi
- Hyun Ho Choi
- Jae Joon Kim
- Jun Takeya
- Junto Tsurumi
- Kilwon Cho
- Shun Watanabe
- Vitaly Podzorov
Organizations
- Gyeongsang National University
- Japan Society for the Promotion of Science
- Ministry of Science, ICT and Future Planning
- National Institute for Materials Science
- National Research Foundation of Korea
- National Science Foundation
- Office of Naval Research
- Pohang University of Science and Technology
- Rutgers University
- University of Massachusetts Amherst
- University of Tokyo