Electronic Structure and Epitaxy of CdTe Shells on InSb Nanowires

Abstract

Indium antimonide (InSb) nanowires are used as building blocks for quantum devices because of their unique properties, that is, strong spin‐orbit interaction and large Landé g‐factor. Integrating InSb nanowires with other materials could potentially unfold novel devices with distinctive functionality. A prominent example is the combination of InSb nanowires with superconductors for the emerging topological particles research. Here, the combination of the II–VI cadmium telluride (CdTe) with the III–V InSb in the form of core–shell (InSb–CdTe) nanowires is investigated and potential applications based on the electronic structure of the InSb–CdTe interface and the epitaxy of CdTe on the InSb nanowires are explored. The electronic structure of the InSb–CdTe interface using density functional theory is determined and a type‐I band alignment is extracted with a small conduction band offset ( ⩽0.3 eV). These results indicate the potential application of these shells for surface passivation or as tunnel barriers in combination with superconductors. In terms of structural quality, it is demonstrated that the lattice‐matched CdTe can be grown epitaxially on the InSb nanowires without interfacial strain or defects. These shells do not introduce disorder to the InSb nanowires as indicated by the comparable field‐effect mobility measured for both uncapped and CdTe‐capped nanowires.

Document Details

Document Type
Pub Defense Publication
Publication Date
Feb 18, 2022
Source ID
10.1002/advs.202105722

Entities

People

  • Bart J. Kooi
  • Bomin Zhang
  • Erik Bakkers
  • Ghada Badawy
  • Jamo Momand
  • Jason Jung
  • Marcel A Verheijen
  • Oussama Moutanabbir
  • Sasa Gazibegovic
  • Sebastian Koelling
  • Sergey M Frolov
  • Silvana Botti
  • Tomáš Rauch

Organizations

  • Dutch Research Council
  • Eurofins Scientific
  • European Research Council
  • Friedrich Schiller University Jena
  • German Research Foundation
  • Polytechnic School of Montreal
  • United States Department of Energy
  • University of Groningen
  • University of Pittsburgh
  • Volkswagen Foundation

Tags

Fields of Study

  • Materials science

Readers

  • Nanoscale Plasmonic Nanotechnology
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Computing
  • Space