Origin of Temperature‐Dependent Ferroelectricity in Si‐Doped HfO2
Abstract
The structural origin of the temperature‐dependent ferroelectricity in Si‐doped HfO2 thin films is systematically examined. From temperature‐dependent polarization‐electric field measurements, it is shown that remanent polarization increases with decreasing temperature. Concurrently, grazing incidence X‐ray diffraction shows an increase in the orthorhombic phase fraction with decreasing temperature. The temperature‐dependent evolution of structural and ferroelectric properties is believed to be highly promising for the electrocaloric cooling application. Magnetization measurements do not provide any indication for a change of magnetization within the temperature range for the strong crystalline phase transition, suggesting that magnetic and structural properties are comparatively decoupled. The results are believed to provide the first direct proof of the strongly coupled evolution of structural and electrical properties with varying temperature in fluorite oxide ferroelectrics.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Mar 24, 2018
- Source ID
- 10.1002/aelm.201700489
Entities
People
- Ching‐chang Chung
- Claudia Richter
- Jacob L. Jones
- M. Hoffmann
- Minhyuk Park
- Steffen Wirth
- Thomas Mikolajick
- Tony Schenk
- Uwe Schroeder
Organizations
- Alexander von Humboldt Foundation
- Army Research Office
- German Research Foundation
- Max Planck Society
- National Research Foundation of Korea
- National Science Foundation
- North Carolina State University
- Technische Universität Dresden