Effect of Annealing Ferroelectric HfO2 Thin Films: In Situ, High Temperature X‐Ray Diffraction
Abstract
The ferroelectricity in fluorite oxides has gained increasing interest due to its promising properties for multiple applications in semiconductor as well as energy devices. The structural origin of the unexpected ferroelectricity is now believed to be the formation of a non‐centrosymmetric orthorhombic phase with the space group of Pca21. However, the factors driving the formation of the ferroelectric phase are still under debate. In this study, to understand the effect of annealing temperature, the crystallization process of doped HfO2 thin films is analyzed using in situ, high‐temperature X‐ray diffraction. The change in phase fractions in a multiphase system accompanied with the unit cell volume increase during annealing could be directly observed from X‐ray diffraction analyses, and the observations give an information toward understanding the effect of annealing temperature on the structure and electrical properties. A strong coupling between the structure and the electrical properties is reconfirmed from this result.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- May 16, 2018
- Source ID
- 10.1002/aelm.201800091
Entities
People
- Ching‐chang Chung
- Christoph Adelmann
- Christophe Detavernier
- Claudia Richter
- Jacob L. Jones
- Karl Opsomer
- Min Hyuk Park
- Thomas Mikolajick
- Tony Schenk
- Uwe Schroeder
Organizations
- Army Research Office
- German Research Foundation
- Ghent University
- National Science Foundation
- North Carolina State University
- Technische Universität Dresden