A Memristor with Low Switching Current and Voltage for 1S1R Integration and Array Operation
Abstract
Memristor devices could realize their full scaling (2D) and stacking (3D) potential if vertically integrated with a two‐terminal selector in a one selector one memristor (1S1R) crossbar array. However, for a 1S1R‐integrated device to function properly, memristor and selector should be compatible in terms of their material composition and electrical properties. A platinum (Pt)/yttria‐stabilized zirconia (YSZ)/zirconium (Zr) memristor with low forming voltage (Ea,diffusion = 0.7 eV) measured in the YSZ switching layer enables the proposed memristor to have the observed low‐energy operation, which renders it better compatible with a selector device than the more commonly used binary oxides. For a proof‐of‐principle demonstration, the device is vertically integrated with a tunneling selector and successfully performs memristor‐electroforming operations with the selector in a self‐compliant 1S1R integrated device. 1S1R cells into a small array (2 × 2) are further investigated and electroforming and resistive switching operations at the array level are demonstrated.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Mar 22, 2020
- Source ID
- 10.1002/aelm.201901411
Entities
People
- Hao Jiang
- Jianhua Joshua Yang
- Jung Ho Yoon
- Miaofang Chi
- Mingyi Rao
- Navnidhi K. Upadhyay
- Peng Lin
- Qiangfei Xia
- Rivu Midya
- Saumil Joshi
- Wen Sun
- Xumeng Zhang
- Zhongrui Wang
Organizations
- Air Force Research Laboratory
- Oak Ridge National Laboratory
- University of Massachusetts