Resonant Tunneling and Negative Differential Resistance in Black Phosphorus Vertical Heterostructures
Abstract
Resonant tunneling diodes with negative differential resistance (NDR) have attracted significant attention due to their unique quantum resonant tunneling phenomena and potential applications in terahertz emission/detection and high‐density logic/memory. In this paper, resonant tunneling devices, where the carriers tunnel through a hexagonal boron nitride (hBN) barrier sandwiched by two black phosphorus (BP) layers, are explored. The resonance occurs when the energy bands of the two black phosphorus layers are aligned. The conductive atomic force microscopy (CAFM) measurements reveal prominent NDR peaks with large peak‐to‐valley ratios at room temperature. It is found that the positions of the NDR peaks are very sensitive to the amplitude and the shape of the voltage waveform used in CAFM, which can be explained by the charge trapping effect. Furthermore, resonant tunneling transistors are demonstrated based on BP/hBN/BP stacks in which the locations of the NDR peaks are tunable by the electrostatic gating. As compared to the traditional tunneling diodes based on bulk materials, the tunneling devices based on thin boron nitride tunneling barrier and high mobility black phosphorus offer ultra‐high‐speed response. This feature, together with the NDR characteristics, provides the potential for applications in THz oscillators and multi‐value logic devices.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jul 15, 2020
- Source ID
- 10.1002/aelm.202000318
Entities
People
- Eric Wynne
- Kai Xu
- Wenjuan Zhu
Organizations
- National Science Foundation
- Office of Naval Research
- University of Illinois Urbana–Champaign